<div id="readability-page-1">News: Optoelectronics Nuvoton releases high-power 1W 379nm UV laser diode Nuvoton Technology Corp Japan of Kyoto, Japan has begun mass production of its KLC330FL01WW high-power ultraviolet semiconductor laser (379nm, 1.0W), which delivers what is claimed to be industry-leading optical output in a 9.0mm-diameter CAN package (TO-9). Applications include: maskless lithography, resin curing, marking, 3D printing, biomedical, and alternative light sources for mercury lamps etc. <img src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/jan/to9can.jpg?x-oss-process=image/auto-orient,1/interlace,1/resize,w_1440,h_1440/quality,q_95/format,jpg" width="300" height="270" original-src="https://imageproxy.pbkrs.com/https://semiconductor-today.com/news_items/2026/jan/to9can.jpg"/>Picture: Nuvoton’s new KLC330FL01WW 379nm, 1.0W high-power ultraviolet semiconductor laser. Through a proprietary device structure and advanced high-heat-dissipation packaging technology, it achieves short wavelength, high output power, and long lifetime — three elements previously considered difficult for ultraviolet semiconductor lasers. As a result, it can contribute to fine patterning and improved production throughput in maskless lithography for advanced semiconductor packaging (in which multiple chips are densely integrated to optimize performance and power efficiency). Features of the new product include: As demand grows for information processing capabilities driven by the evolution of artificial intelligence (AI), there is increasing need for higher performance from semiconductors than ever before. On the other hand, as the miniaturization of transistors approaches its physical and economic limits, semiconductor back-end package technologies and advanced semiconductor packaging, which allow for integration by arranging multiple semiconductor chips side by side or stacking them vertically, have been attracting attention. In advanced semiconductor packaging, the mainstream method for forming wiring connections between multiple chips has been exposure technology using the i-line (365nm) of the mercury spectrum and photomasks (master masks of circuits). On the other hand, there has been growing interest in recent years in maskless lithography technology, which directly exposes (draws) wiring patterns based on design data without using photomasks. This technology is considered to reduce the time and cost associated with the design and production of photomasks. Furthermore, because it is possible to directly imprint wiring patterns to match the surface shape of the target for drawing, alignment and correction are easier, and application to advanced semiconductor packages is currently under consideration. As one of the key light sources in maskless lithography, semiconductor lasers have faced increasing demands for shorter wavelengths closer to the i-line (365nm) and higher output, in order to enable finer wiring and improve equipment throughput. To meet these requirements, Nuvoton says that it has leveraged over 40 years of experience in laser design and manufacturing to develop and commercialize an ultraviolet semiconductor laser with a wavelength of 379nm and an output of 1.0W. Ultraviolet semiconductor lasers generally suffer from significant heat generation caused by low wall-plug efficiency (WPE), and a tendency for device degradation caused by ultraviolet light, making stable operation at high output levels above 1.0W difficult to achieve. To address this, Nuvoton took a dual approach by focusing on both a device structure that enhances wall-plug efficiency (WPE) and a high-thermal-conduction package technology that effectively dissipates heat, enabling the firm to develop a product that combines short wavelength, high output, and long lifetime: a 1.0W ultraviolet (379nm) device. As a result, Nuvoton is contributing to extending the lifetime of optical devices that utilize ultraviolet light. <ul type="disc"> <li> In addition to optimizing the emission layer and optical guide layer, Nuvoton has adopted a proprietary structure that precisely controls the doping profile. By reducing light absorption loss and operating voltage, this allows electrical energy to be converted into light more efficiently.</li> </ul> <ul type="disc"> <li> In addition to adopting a submount made of high-thermal-conductivity materials, the package materials have been revised to reduce thermal resistance. As a result, rises in device temperature are suppressed, allowing for stable operation at high output.</li> </ul> The new product has been added to the Nuvoton’s lineup of ultraviolet (379nm), violet (402nm) and indigo (420nm) semiconductor laser-based alternatives designed to replace the i-line (365nm), h-line (405nm) and g-line (436nm) emission lines of mercury lamps, providing customers with a new choice. With this addition, customers can flexibly select products according to application, installation environment, and required performance, increasing the freedom of system design. <div>Details of the new product were showcased at SPIE Photonics West 2026 in San Francisco, CA, USA (20–22 January), and are being exhibited at OPIE’26 (OPTICS &amp; PHOTONICS International Exhibition) at Pacifico Yokohama, Japan (22–24 April)</div> Nuvoton launches compact 1.7W 402nm violet laser in TO-56 CAN packageLaser diodeswww.opie.jpwww.nuvoton.co.jp/en </div>

Nuvoton Technology Corp has commenced mass production of its KLC330FL01WW high-power ultraviolet semiconductor laser, featuring a 379nm wavelength and 1.0W output. This laser is designed for applications such as maskless lithography, resin curing, and 3D printing. Nuvoton's proprietary technology enhances wall-plug efficiency and thermal management, enabling stable high-output operation. The new product expands Nuvoton's lineup of semiconductor lasers, providing alternatives to traditional mercury lamps and supporting advanced semiconductor packaging needs. Details were presented at SPIE Photonics West 2026 and OPIE'26 exhibitions.

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Nuvoton releases high-power 1W 379nm UV laser diode